Analysis and Design of Mosfets: Modeling, Simulation and by J. J. Liou, A. Ortiz-Conde, F. Garcia-Sanchez (auth.)

By J. J. Liou, A. Ortiz-Conde, F. Garcia-Sanchez (auth.)

Analysis and layout of MOSFETs: Modeling, Simulation, and ParameterExtraction is the 1st ebook dedicated completely to a huge spectrum of study and layout matters relating to the semiconductor machine referred to as metal-oxide semiconductor field-effect transistor (MOSFET). those matters contain MOSFET machine physics, modeling, numerical simulation, and parameter extraction. The dialogue of the applying of equipment simulation to the extraction of MOSFET parameters, reminiscent of the edge voltage, powerful channel lengths, and sequence resistances, is of specific curiosity to all readers and gives a useful studying and reference instrument for college students, researchers and engineers.
Analysis and layout of MOSFETs: Modeling, Simulation, and ParameterExtraction, greatly referenced, and containing greater than one hundred eighty illustrations, is an leading edge and crucial new booklet on MOSFETs layout technology.

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CHAPTER J. 1 V 10 16 10 14 C 0 ~ .... CO L.. 15 : Electron concentration versus the vertical distance taken at source and drain junctions. The lateral and vertical electric fields versus the vertical distance, taken at the source and drain, are shown in Fig. 17. The vertical electric field is high only inside the inversion layer. Furthennore, for this case, it can be concluded that the gradual channel approximation (GCA) [30,34] is valid because the lateral electric field is much smaller than the vertical electric field and thus the two fields can be assumed not interacting with each other and be treated separately.

73V. The surface band bending at the onset of inversion can also be derived using a more rigorous approach. 50) are: a) the term exp(-pl\1) is due to hole accumulation charge; b) the term (Pl\1 - 1) is due to depletion charge; and c) the term (njpo){exp(-pV)[exp(pl\1) - 1] - Pl\1} is due to inversion charge. The inversion charge term at the source (V = 0), which is approximated by (njpo)exp(pl\1), is much larger than the depletion term for the case ofPl\1 > 1. 816 V. 55) 43 CHAPTER 1. 55). On the other hand, solving the simplified equation (njpo)exp(Pws) = 1would yield Ws= 2<1>B.

12 shows the device structure and a MOSFET SPICE model including R o and R s' which illustrates graphically the effects of Ro and Rs on the device operation. The origins of Ro and Rs' as well as how to extract their values from measurement data or simulation results will be discussed in Chapter 5. Advanced features such as the silicon-on-insulator (SOl) and lightly-doped drain (LDD) region can be added into the conventional MOSFET to improve the device performance under certain operating conditions.

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